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Bulletin I25179 rev. D 03/03
ST183S SERIES
INVERTER GRADE THYRISTORS Stud Version
Features
Center amplifying gate High surge current capability Low thermal impedance High speed performance
195A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz It
2
ST183S
195 85 306 4900 5130 120 110 400 to 800 15 - 20 - 40 to 125
Units
A C A A A KA2s KA2s V s C
@ 50Hz @ 60Hz
V DRM /V RRM tq TJ
case style TO-209AB (TO-93)
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1
ST183S Series
Bulletin I25179 rev. D 03/03
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code V DRM/V RRM, maximum repetitive peak voltage V
ST183S 04 08 400 800
VRSM , maximum non-repetitive peak voltage V
500 900
I DRM/I RRM max.
@ TJ = TJ max.
mA
40
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 570 560 500 340 50 V DRM 50 60
ITM 180 el 370 360 300 190 50 50 85 900 940 925 760 50 V DRM 60
o
ITM 100s 610 630 610 490 50 85 7040 3200 1780 880 50 V DRM 60
ITM
Units
5220 2280 1200 560 50 85 V A/s C A
47 / 0.22F
47 / 0.22F
47 / 0.22F
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one half cycle, non-repetitive surge current
ST183S
195 85 306 4900 5130 4120 4310
Units Conditions
A C DC @ 74C case temperature t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2s t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max 180 conduction, half sine wave
I 2t
Maximum I2t for fusing
120 110 85 78
I 2t
Maximum I2t for fusing
1200
t = 0.1 to 10ms, no voltage reapplied
2
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ST183S Series
Bulletin I25179 rev. D 03/03
On-state Conduction
Parameter
V TM Max. peak on-state voltage
ST183S
1.80 1.40 1.45 0.67
Units
Conditions
ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse
V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 IH IL Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current
V
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max.
m 0.58 600 1000 mA
T J = 25C, I T > 30A T J = 25C, V A= 12V, Ra = 6, I G = 1A
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current td tq Typical delay time Min 15
ST183S
1000 1.1 Max 20
Units
A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ = 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/s VR = 50V, tp = 500s, dv/dt = 200V/s
s
Max. turn-off time
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST183S
500 40
Units
V/s mA
Conditions
TJ = TJ max., linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST183S
60 10 10 20
Units
W A
Conditions
TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -VGM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
TJ = TJ max, tp 5ms
TJ = TJ max, VA = 12V, Ra = 6 V mA V TJ = TJ max, rated VDRM applied
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ST183S Series
Bulletin I25179 rev. D 03/03
Thermal and Mechanical Specifications
Parameter
TJ Tstg RthJC RthCS T Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque, 10%
ST183S
-40 to 125 -40 to 150 0.105 0.04 31 (275) 24.5 (210)
Units
C
Conditions
DC operation K/W Nm (Ibf-in) Nm (Ibf-in) g See Outline Table Non lubricated threads Lubricated threads Mounting surface, smooth, flat and greased
wt
Approximate weight Case style
280
TO-209AB (TO-93)
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction Units
0.016 0.019 0.025 0.036 0.060 0.012 0.020 0.027 0.037 0.060 K/W
Conditions
TJ = TJ max.
Ordering Information Table
Device Code
ST
1 1 2 3 4 5 6 7 8 9 - Thyristor - Essential part number - 3 = Fast turn off
18
2
3
3
S
4
08
5
P
6
F
7
K
8
0
9
- S = Compression bonding Stud - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) - P = Stud base 3/4" 16UNF-2A - Reapplied dv/dt code (for tq test condition) - tq code - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 1 = Fast-on terminals (Gate and Aux. Cathode Leads) NOTE: For Metric device M16 x 1.5 Contact Factory dv/dt - tq combinations available
dv/dt (V/s) tq(s) 15 20 200 FL FK
4
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ST183S Series
Bulletin I25179 rev. D 03/03
Outline Table
CERAMIC HOUSING
19 (0.75) MAX. 4 (0.16) MAX. 4.3 (0.17) DIA.
(0 . 37 ) 9 .5 MI
8.5 (0.33) DIA.
RED SILICON RUBBER 10 (0.39) C.S. 0.4mm 2 RED CATHODE (0.0006 s.i.) WHITE GATE
(0.039 s.i.)
22
FLEXIBLE LEAD C.S. 25mm 2
(0 .86 )
MI N.
N.
Fast-on Terminals
AMP. 280000-1 REF-250
+I 210 (8.26)
90 (3.54) MIN.
RED SHRINK
220 (8.66) + 10 (0.39) WHITE SHRINK
38.5 (1.52)
16 (0.63) MAX.
MAX.
27.5 (1.08) MAX. DIA.
27.5 (1.08)
MAX.
SW 32 3/4"-16UNF-2A * 35 (1.38) MAX.
Case Style TO-209AB (TO-93)
All dimensions in millimeters (inches)
* FOR METRIC DEVICE: M16 X 1.5 - LENGHT 21 (0.83) MAX. CONTACT FACTORY
Maximum Allowable Ca s T e emperature (C)
Maximum Allowable Ca s T e emperature (C)
130 S 183S S T eries RthJC (DC) = 0.105 K/ W 120
130 120 110 100 90 80 70 0 50
S 183S S T eries RthJC (DC) = 0.105 K/ W
110
Conduction Angle
Conduc tion Period
100
30 60 90 120 180 DC 100 150 200 250 300 350
90
30
60
90
180 120
80 0 20 40 60 80 100 120 140 160 180 200 Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
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5
ST183S Series
Bulletin I25179 rev. D 03/03
Maximum Average On-s tate Power Loss (W) 350
300 250
180 120 90 60 30
S R th
0. 2
200 RMSLimit
150
Conduc tion Angle
0.3 K/ W
0.4 K/ W 0.5 K/ W
0.8 K/ W 1.2 K /W
16 0.
K/ W
1 0. W K/
W K/
A
= 8 0.0 W K/ -D a elt R
100 50 0
0
S 183SS T eries T = 125C J
20 40 60 80 100 120 140 160 180 200 25
50
75
100
125
Average On-s tate Current (A)
Maximum Allowable Ambient T emperature (C)
Fig. 3 - On-state Power Loss Characteristics
Maximum Average On-state Power Loss (W)
500 450 400 350 300 250 200 RMSLimit 150 100 50 0
0 50 100 150 200 250 300 350 25
Conduction Period
DC 180 120 90 60 30
R
SA th
0. 1
=
K/ W
0. 08
0.1 6K /W 0.2 K/ W 0.3 K/ W 0.4 K/ W
K/ W
-D el ta
R
0.5 K /
S 183SS T eries T = 125C J
W 0.8 K/ W
1.2 K/ W
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 4 - On-state Power Loss Characteristics
Peak Half S Wave On-state Current (A) ine
4000
At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 125C J @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Peak Half S Wave On-state Current (A) ine
4500
5000
3500
Maximum Non Repetitive S urge Current Versus Pulse T rain Duration. Control 4500 Of Conduction May Not Be Maintained. Initial T = 125C J No Voltage Reapplied 4000 Rated VRRM Reapplied 3500 3000 2500 2000 0.01
3000
2500 S 183SS T eries 2000 1 10 100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
S 183S S T eries
0.1 Puls T e rain Duration (s)
1
Fig. 5 - Maximum Non-repetitive Surge Current
Fig. 6 - Maximum Non-repetitive Surge Current
6
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ST183S Series
Bulletin I25179 rev. D 03/03
T rans ient T hermal Impedance Z thJC (K/ W)
10000 Instantaneous On-s tate Current (A) S 183S S T eries
1 S teady S tate Value R thJC = 0.105 K/ W (DC Operation) 0.1
T = 125C J 1000 T = 25C J
0.01 S 183S S T eries
100 1 1.5 2 2.5 3 3.5 4 Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
0.001 0.001
0.01
0.1
1
10
S quare Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Maximum Reverse Recovery Charge - Qrr (C)
IT = 500 A M
Maximum R everse R ecovery Current - Irr (A)
250 S 183SS T eries T = 125 C J
160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 Rate Of Fall Of On-state Current - di/ dt (A/ s)
Fig. 10 - Reverse Recovery Current Characteristics
I
T M
200
300 A 200 A 100 A
150
= 500 A 300 A 200 A 100 A 50 A
100
50 A
50
S 183SS T eries T = 125 C J
0 0 20 40 60 80 100 Rate Of Fall Of On-state Current - di/ dt (A/ s)
Fig. 9 - Reverse Recovered Charge Characteristics
1E4
Peak On-s tate Current (A)
S nub ber circuit R s = 47 ohms C s = 0.22 F V D = 80% VDRM 1000 1500 500 400 200 100 50 Hz
1000 1500 2500 3000 5000 tp 500 400 200
S nub ber circuit Rs = 47 ohms Cs = 0.22 F V D = 80% VDRM
100
50 Hz
1E3
2500 3000 5000 S 183SS T eries S inusoida l p ulse T = 60C C
tp
S 183SS T eries S inusoida l pulse T = 85C C
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E 2
1E3
1E 4
Pulse Basewidth (s)
Fig. 11 - Frequency Characteristics
Pulse Basewidth (s)
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7
ST183S Series
Bulletin I25179 rev. D 03/03
1E4
S nub ber c ircuit R s = 47 ohms C s = 0.22 F V D = 80% VDRM
S nub ber c ircuit R s = 47 ohms C s = 0.22 F V D = 80% VDRM
Peak On-state Current (A)
1E3
2500 1500 3000 5000 1000 500
400 200 100
50 Hz
200 100 500 400 1500 1000 2500 3000
50 Hz
1E2
10000
S 183SS T eries T pezoidal pulse ra T = 60C C di/ d t = 50A/s
5000
10000
S 183SS T eries T pezoidal pulse ra T = 85C C di/d t = 50A/ s
1E1 1E1
1E2
1E 3
1E4 4 1E1 1E1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 12 - Frequency Characteristics
Pulse Basewidth (s)
1E4
S nub ber c ircuit R s = 47 ohms C s = 0.22 F V D = 80% VDRM
S nub ber c ircuit R s = 47 ohms C s = 0.22 F V D = 80% VDRM
Peak On-state Current (A)
1E3
2500 3000 5000 500 1500 1000
100 50 Hz 400 200
1500 2500 3000 400 200 1000 500
100
50 Hz
1E2
10000 tp
S 183SS T eries T pezoidal pulse ra T = 60C C di/d t = 100A/ s
5000 tp
10000
S 183SS T eries T pezoidal pulse ra T = 85C C di/d t = 100A/ s
1E1 1E1
1E2
1E 3
1E4 4 1E1 1E1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 13 - Frequency Characteristics
Pulse Basewidth (s)
1E5
S 183SS T eries Rectangula r pulse
Peak On-state Current (A)
tp
di/ dt = 50A/ s 20 jo ules per pulse
1E4
2 5 10
20 joules per p ulse 0.5 1
5 2 1 0.3 0.2 0.1 0.5 10
1E3
0.3 0.2 0.1
1E2
S 183S S T eries S inusoida l p ulse tp
1E1 1E1
1E 2
1E3
1E 1E1 1E4 4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
8
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ST183S Series
Bulletin I25179 rev. D 03/03
100 Instantaneous Gate Voltage (V) R ectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 s b) R ecommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (b)
T j=-40 C T j=25 C T j=125 C
(1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a)
tp tp tp tp
= 20ms = 10ms = 5ms = 3.3ms
1 VGD IGD 0.1 0.001 0.01
(1)
(2)
(3) (4)
Device: S 183SS T eries 0.1 1
Frequency Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03 /03
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